| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Dual |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 50@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 130 |
| Typischer Eingangswiderstand (kOhm) | 22 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 1 |
| Max. Leistungsaufnahme (mW) | 250 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| Stiftanzahl | 6 |
| Leitungsform | Gull-wing |
Are you looking to build a digital signal processing device? The NPN BCR141SH6327XTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a dual configuration.
