| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 70@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 100 |
| Typischer Eingangswiderstand (kOhm) | 47 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 1 |
| Max. Leistungsaufnahme (mW) | 200 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Are you looking to build a digital signal processing device? The NPN BCR148E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
