Infineon Technologies AGBCR166E6327HTSA1Digital-BJT

Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Infineon Technologies brings you their latest PNP BCR166E6327HTSA1 digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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Auf Lager: 25.941 Stück

Regional Inventory: 1.941

    Total0,01 €Price for 1

    1.941 auf Lager: Versand in vsl. 10 Tagen

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1552+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 1.941 Stück
      • Price: 0,0127 €
    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2547+
      Manufacturer Lead Time:
      15 Wochen
      Country Of origin:
      China
      • In Stock: 24.000 Stück
      • Price: 0,051 €

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