Infineon Technologies AGBCR185E6327HTSA1Digital-BJT

Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Are you looking to build a digital signal processing device? The PNP BCR185E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.

24.000 Stück: Versand in vsl. 2 Tagen

    Total159,90 €Price for 3000

    • (3000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2430+
      Manufacturer Lead Time:
      4 Wochen
      Country Of origin:
      China
      • In Stock: 24.000 Stück
      • Price: 0,0533 €