| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 500 |
| Mindestgleichstromverstärkung | 70@50mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 100 |
| Typischer Eingangswiderstand (kOhm) | 2.2 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@2.5mA@50mA |
| Typisches Widerstandsverhältnis | 0.22 |
| Max. Leistungsaufnahme (mW) | 330 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
In contrast to traditional transistors, Infineon Technologies' NPN BCR505E6327HTSA1 digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
