Infineon Technologies AGBCR523UE6327HTSA1Digital-BJT
Trans Digital BJT NPN 50V 0.5A 330mW 6-Pin SC-74 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCR523UE6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Dual | |
| 50 | |
| 500 | |
| 70@50mA@5V | |
| 100 | |
| 1 | |
| 0.3@2.5mA@50mA | |
| 0.1 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-74 |
| 6 | |
| Leitungsform | Gull-wing |
Thanks to Infineon Technologies' NPN BCR523UE6327HTSA1 digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |