Infineon Technologies AGBCR533E6327HTSA1Digital-BJT
Trans Digital BJT NPN 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 500 | |
| 70@50mA@5V | |
| 100 | |
| 10 | |
| 0.3@2.5mA@50mA | |
| 1 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the NPN BCR533E6327HTSA1 digital transistor, developed by Infineon Technologies, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |