Infineon Technologies AGBCR553E6327HTSA1Digital-BJT
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 500 | |
| 40@50mA@5V | |
| 150 | |
| 2.2 | |
| 0.3@2.5mA@50mA | |
| 1 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Are you looking to build a digital signal processing device? The PNP BCR553E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 40@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |