Infineon Technologies AGBCR555E6433HTMA1Digital-BJT
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 500 | |
| 70@50mA@5V | |
| 150 | |
| 2.2 | |
| 0.3@2.5mA@50mA | |
| 0.22 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the PNP BCR555E6433HTMA1 digital transistor from Infineon Technologies. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 70@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |