| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | PNP |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 500 |
| Mindestgleichstromverstärkung | 60@50mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 150 |
| Typischer Eingangswiderstand (kOhm) | 4.7 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@2.5mA@50mA |
| Typisches Widerstandsverhältnis | 1 |
| Max. Leistungsaufnahme (mW) | 330 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the PNP BCR562E6327HTSA1 digital transistor, developed by Infineon Technologies, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 60@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
