Infineon Technologies AGBCV62AE6327HTSA1GP BJT
Trans GP BJT PNP 30V 0.1A 300mW Automotive AEC-Q101 4-Pin SOT-143 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-143 |
| 4 | |
| Leitungsform | Gull-wing |
Look no further than Infineon Technologies' PNP BCV62AE6327HTSA1 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |