Infineon Technologies AGBCV62BE6327HTSA1GP BJT
Trans GP BJT PNP 30V 0.1A 300mW Automotive AEC-Q101 4-Pin SOT-143 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-143 |
| 4 | |
| Leitungsform | Gull-wing |
Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP BCV62BE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |