Infineon Technologies AGBCV62CE6327HTSA1GP BJT
Trans GP BJT PNP 30V 0.1A 300mW Automotive AEC-Q101 4-Pin SOT-143 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Base | |
| 2 | |
| 30 | |
| 30 | |
| 6 | |
| 150 | |
| 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 5000 | |
| 100@0.1mA@5V|420@2mA@5V | |
| 300 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-143 |
| 4 | |
| Leitungsform | Gull-wing |
Design various electronic circuits with this versatile PNP BCV62CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |