Infineon Technologies AGBCW61BE6327HTSA1GP BJT
Trans GP BJT PNP 32V 0.1A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCW61BE6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 32 | |
| 32 | |
| 5 | |
| 0.85@0.25mA@10mA|1.05@1.25mA@50mA | |
| 0.25@0.25mA@10mA|0.55@1.25mA@50mA | |
| 0.1 | |
| 180@2mA@5V|30@10uA@5V|80@50mA@1V | |
| 330 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP BCW61BE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |