Infineon Technologies AGBCW66KGE6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 45 | |
| 5 | |
| 1.25@10mA@100mA|1.25@50mA@500mA | |
| 150 | |
| 0.3@10mA@100mA|0.45@50mA@500mA | |
| 0.8 | |
| 20 | |
| 110@10mA@1V|160@100mA@1V|40@500mA@1V | |
| 500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, Infineon Technologies' NPN BCW66KGE6327HTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |