Diodes IncorporatedBCX38CSTZDarlington BJT
Trans Darlington NPN 60V 0.8A 1000mW 3-Pin TO-92 Box
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
60 | |
80 | |
10 | |
0.8 | |
0.1 | |
1.25@8mA@800mA | |
10000@500mA@5V|5000@100mA@5V | |
1000 | |
-55 | |
200 | |
Box | |
Befestigung | Through Hole |
Verpackungshöhe | 4.83(Max) |
Verpackungsbreite | 3.66(Max) |
Verpackungslänge | 4.78(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-92 |
3 | |
Leitungsform | Through Hole |
Traditional transistors can produce low current gains. One of Diodes Zetex's NPN BCX38CSTZ Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 10 V. This product's maximum continuous DC collector current is 0.8 A, while its minimum DC current gain is 5000@100mA@5 V|10000@500mA@5V. It has a maximum collector emitter saturation voltage of 1.25@8mA@800mA V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C.