Infineon Technologies AGBCX51H6327XTSA1GP BJT
Trans GP BJT PNP 45V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCX51H6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 45 | |
| 45 | |
| 5 | |
| 150 | |
| 0.5@50mA@500mA | |
| 1 | |
| 100 | |
| 25@500mA@2V|25@5mA@2V|40@150mA@2V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Add switching and amplifying capabilities to your electronic circuit with this PNP BCX51H6327XTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |