Diodes IncorporatedBCX5516TAGP BJT

Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R

Implement this NPN BCX5516TA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Import TariffMay apply to this part

17.000 Stück: Versand in vsl. 2 Tagen

    Total96,00 €Price for 1000

    • (1000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2511+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 17.000 Stück
      • Price: 0,0960 €