Infineon Technologies AGBCX6816H6327XTSA1GP BJT
Trans GP BJT NPN 20V 1A 3000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCX6816H6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 5 | |
| 0.5@100mA@1A | |
| 1 | |
| 100 | |
| 100@500mA@1V|50@5mA@10V|60@1A@1V | |
| 3000 | |
| 100(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
If your circuit's specifications require a device that can handle high levels of voltage, Infineon Technologies' NPN BCX6816H6327XTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 3000 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |