Infineon Technologies AGBCX6825H6327XTSA1GP BJT
Trans GP BJT NPN 20V 1A 3000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCX6825H6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 5 | |
| 0.5@100mA@1A | |
| 1 | |
| 50@5mA@10V|160@500mA@1V|60@1A@1V | |
| 3000 | |
| 100(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Implement this NPN BCX6825H6327XTSA1 GP BJT from Infineon Technologies to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |