Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
25 | |
20 | |
5 | |
0.5@100mA@1A | |
1 | |
160@500mA@1V|50@5mA@10V|60@1A@1V | |
1000 | |
100(Min) | |
-65 | |
150 | |
Tape and Reel | |
Automotive | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5 |
Verpackungsbreite | 2.5 |
Verpackungslänge | 4.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-89 |
4 | |
Leitungsform | Flat |
This specially engineered NPN BCX6825TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.