STMicroelectronicsBD136GP BJT
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| BD136 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.05(Max) |
| Verpackungsbreite | 2.9(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this PNP BD136 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |