STMicroelectronicsBD138GP BJT
Trans GP BJT PNP 60V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.8(Max) |
| Verpackungsbreite | 2.7(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
This PNP BD138 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |