STMicroelectronicsBD237GP BJT
Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 80 | |
| 5 | |
| 0.6@0.1A@1A | |
| 2 | |
| 100000 | |
| 25@1A@2V|40@150mA@2V | |
| 25000 | |
| 3(Min) | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.05(Max) |
| Verpackungsbreite | 2.9(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
Jump-start your electronic circuit design with this versatile NPN BD237 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 25000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |