STMicroelectronicsBD436GP BJT
Trans GP BJT PNP 32V 4A 36000mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.8(Max) mm |
| Verpackungsbreite | 2.7(Max) mm |
| Verpackungslänge | 7.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
The three terminals of this PNP BD436 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |