STMicroelectronicsBD438GP BJT
Trans GP BJT PNP 45V 4A 36000mW 3-Pin(3+Tab) SOT-32 Tube
EAR99 | |
Active | |
8541.21.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single | |
1 | |
45 | |
45 | |
5 | |
0.6@0.2A@2A | |
4 | |
100000 | |
30@10mA@5V|85@500mA@1V|40@2A@1V | |
36000 | |
3(Min) | |
-65 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 10.8(Max) |
Verpackungsbreite | 2.7(Max) |
Verpackungslänge | 7.8(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | SOT-32 |
3 | |
Leitungsform | Through Hole |
Implement this versatile PNP BD438 GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |