onsemiBD676AGDarlington BJT
Trans Darlington PNP 45V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 45 | |
| 45 | |
| 5 | |
| 4 | |
| 200 | |
| 2.8@40mA@2A | |
| 750@2A@3V | |
| 40000 | |
| -55 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) |
| Verpackungsbreite | 3(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Thanks to ON Semiconductor's PNP BD676AG Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@2A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A|2.8@40mA@2A V. Its maximum power dissipation is 40000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |