STMicroelectronicsBD682Darlington BJT
Trans Darlington PNP 100V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 4 | |
| 200 | |
| 2.5@30mA@1.5A | |
| 750@1.5A@3V | |
| 40000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.8(Max) |
| Verpackungsbreite | 2.7(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | SOT-32 |
| 3 | |
| Leitungsform | Through Hole |
Higher current yields within your circuit is what you will get with STMicroelectronics' PNP BD682 Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |