onsemiBD682GDarlington BJT
Trans Darlington PNP 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) |
| Verpackungsbreite | 3(Max) |
| Verpackungslänge | 7.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Higher current yields within your circuit is what you will get with ON Semiconductor's PNP BD682G Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |