onsemiBDV65BGDarlington BJT
Trans Darlington NPN 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Increase the current gain in your circuit by using ON Semiconductor's NPN BDV65BG Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V. It has a maximum collector emitter saturation voltage of 2@0.02A@5A V. Its maximum power dissipation is 125000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |