onsemiBDW42GDarlington BJT
Trans Darlington NPN 100V 15A 85000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.53(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Higher current yields within your circuit is what you will get with ON Semiconductor's NPN BDW42G Darlington transistor. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 250@10A@4 V|1000@5A@4V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@50mA@10A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 85000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |