| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
The PNP BDW94C Darlington transistor from STMicroelectronics is the perfect solution when amplified current gain values are needed. This product's maximum continuous DC collector current is 12 A, while its minimum DC current gain is 1000@3A@3 V|100@10A@3V|750@5A@3V. It has a maximum collector emitter saturation voltage of 2@20mA@5A|3@100mA@10A V. This Darlington transistor array's maximum base emitter saturation voltage is 2.5@20mA@5A|4@100mA@10A V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 100 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
