onsemiBDX33CGDarlington BJT
Trans Darlington NPN 100V 10A 70000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.53(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Thanks to ON Semiconductor's NPN BDX33CG Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2.5@6mA@3A V. Its maximum power dissipation is 70000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |