onsemiBDX34CGDarlington BJT
Trans Darlington PNP 100V 10A 70000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 10 | |
| 1000 | |
| 2.5@6mA@3A | |
| 750@3A@3V | |
| 70000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.53(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Are you looking for an amplified current signal in your circuit? The PNP BDX34CG Darlington transistor from ON Semiconductor yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2.5@6mA@3A V. Its maximum power dissipation is 70000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |