onsemiBDX53BGDarlington BJT
Trans Darlington NPN 80V 8A 65000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| 2.5@12mA@3A | |
| 8 | |
| 200 | |
| 2@12mA@3A|4@12mA@3A | |
| 750@3A@3V | |
| 65000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.53(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Are traditional transistors not providing enough of a current gain? The NPN BDX53BG Darlington transistor from ON Semiconductor can help. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2@12mA@3A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.5@12mA@3A V. Its maximum power dissipation is 65000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |