onsemiBDX53CGDarlington BJT
Trans Darlington NPN 100V 8A 65000mW 3-Pin(3+Tab) TO-220AB Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
100 | |
100 | |
5 | |
2.5@12mA@3A | |
8 | |
200 | |
4@12mA@3A|2@12mA@3A | |
750@3A@3V | |
65000 | |
-65 | |
150 | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 9.28(Max) |
Verpackungsbreite | 4.83(Max) |
Verpackungslänge | 10.53(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO-220 |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
Are you looking for an amplified current signal in your circuit? The NPN BDX53CG Darlington transistor from ON Semiconductor yields a much higher gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.5@12mA@3A V. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 2@12mA@3A V. Its maximum power dissipation is 65000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |