| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Obsolete |
| HTS | 8541.21.00.75 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | TO-236AB |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
This BF513,215 JFET transistor from NXP Semiconductors is an uni-polar voltage-controlled device that has a very high input electrical resistance. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This junction field effect transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
