NXP SemiconductorsBF820,215GP BJT

Trans GP BJT NPN 300V 0.05A 250mW 3-Pin SOT-23 T/R

NXP Semiconductors has the solution to your circuit's high-voltage requirements with their NPN BF820,215 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.