Infineon Technologies AGBFN27E6327HTSA1GP BJT

Trans GP BJT PNP 300V 0.2A 360mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Use this versatile PNP BFN27E6327HTSA1 GP BJT from Infineon Technologies to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

2.421 Stück: Versand in vsl. 2 Tagen

    Total0,05 €Price for 1

    • Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2337+
      Manufacturer Lead Time:
      26 Wochen
      Country Of origin:
      China
      • In Stock: 2.421 Stück
      • Price: 0,0524 €

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