Infineon Technologies AGBFP193E6327HTSA1HF-BJT
Trans RF BJT NPN 12V 0.08A 580mW 4-Pin SOT-143 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
Si | |
Single Dual Emitter | |
1 | |
20 | |
12 | |
<20 | |
2 | |
0.08 | |
0.06 to 0.12 | |
1000 | |
100 | |
8V/30mA | |
70@30mA@8V | |
50 to 120 | |
2.25 | |
0.59 | |
580 | |
18 | |
8000(Typ) | |
1.6(Typ) | |
-55 | |
150 | |
Automotive | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 4 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-143 |
4 | |
Leitungsform | Gull-wing |
This BFP193E6327HTSA1 RF amplifier from Infineon Technologies is designed to operate at higher RF frequencies. This RF transistor has an operating temperature range of -55 °C to 150 °C.