Infineon Technologies AGBFP520FH6327XTSA1HF-BJT
Trans RF BJT NPN 2.5V 0.05A 120mW 4-Pin TSFP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Si | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.5 | |
| <20 | |
| 1 | |
| 0.05 | |
| 0.001 to 0.06 | |
| 35000 | |
| 200000000 | |
| 2V/20mA | |
| 70@20mA@2V | |
| 50 to 120 | |
| 0.31 | |
| 0.07 | |
| 120 | |
| 10.5 | |
| 22.5 | |
| 23.5 | |
| 45000(Typ) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.4 |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | TSFP |
| 4 |
This BFP520FH6327XTSA1 RF amplifier from Infineon Technologies is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |