Compliant | |
EAR99 | |
LTB | |
8541.21.00.95 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
Si | |
Single Dual Emitter | |
1 | |
10 | |
4.5 | |
<20 | |
1 | |
0.08 | |
0.06 to 0.12 | |
10000 | |
100 | |
2V/20mA | |
50@20mA@3.5V | |
50 to 120 | |
0.55 | |
0.16 | |
250 | |
11(Typ) | |
20 | |
24.5(Typ) | |
30000(Typ) | |
1.4(Min) | |
-55 | |
150 | |
Automotive | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.55 |
Verpackungsbreite | 0.8 |
Verpackungslänge | 1.4 |
Leiterplatte geändert | 4 |
Standard-Verpackungsname | TSFP |
Lieferantenverpackung | TSFP |
4 | |
Leitungsform | Flat |
Implement this BFP540FESDH6327XTSA1 RF amplifier from Infineon Technologies into your circuit so that it can operate at higher RF frequency range. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.