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Infineon Technologies AGBFP640H6327XTSA1HF-BJT
Trans RF BJT NPN 4.1V 0.05A 200mW 4-Pin(3+Tab) SOT-343 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 13 | |
| 4 | |
| <20 | |
| 1.2 | |
| 0.05 | |
| 0.001 to 0.06 | |
| 3000 | |
| 100 | |
| 3V/30mA | |
| 110@30mA@3V | |
| 50 to 120 | |
| 200 | |
| 13(Typ) | |
| 24 | |
| 26.5(Typ) | |
| 40000(Typ) | |
| 1.2(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-343 |
| 4 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the BFP640H6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, can properly function in the event of high radio frequency power situations. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |