Infineon Technologies AGBFP650H6327XTSA1HF-BJT
Trans RF BJT NPN 4V 0.15A 500mW 4-Pin SOT-343 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 13 | |
| 4 | |
| <20 | |
| 1.2 | |
| 0.15 | |
| 0.12 to 0.5 | |
| 500 | |
| 40 | |
| 3V/70mA | |
| 100@70mA@3V | |
| 50 to 120 | |
| 1.3 | |
| 0.26 | |
| 500 | |
| 17(Typ) | |
| 38 | |
| 31(Typ) | |
| 42000(Typ) | |
| 1.6(Typ) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-343 |
| 4 | |
| Leitungsform | Gull-wing |
Look no further than the BFP650H6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |