Infineon Technologies AGBFP840ESDH6327XTSA1HF-BJT
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
Compliant | |
EAR99 | |
Active | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
SiGe | |
Single Dual Emitter | |
1 | |
2.9 | |
2.25 | |
<20 | |
0.035 | |
0.001 to 0.06 | |
10000 | |
400 | |
1.8V/10mA | |
150@10mA@1.8V | |
120 to 200 | |
0.41 | |
0.037 | |
75 | |
5(Typ) | |
17 | |
19.5(Typ) | |
80000(Typ) | |
1.45(Typ) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.9(Max) |
Verpackungsbreite | 1.25 |
Verpackungslänge | 2 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-343 |
4 | |
Leitungsform | Gull-wing |
This BFP840ESDH6327XTSA1 RF amplifier from Infineon Technologies offers superior characteristics as compared to RF MOSFETS allowing it to operate at higher RF frequencies. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.