Infineon Technologies AGBFP840FESDH6327XTSA1HF-BJT
Trans RF BJT 2.25V 0.035A 4-Pin TSFP T/R
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 2.9 | |
| 2.25 | |
| <20 | |
| 0.035 | |
| 0.001 to 0.06 | |
| 10000 | |
| 400 | |
| 1.8V/10mA | |
| 150@10mA@1.8V | |
| 120 to 200 | |
| 0.37 | |
| 0.038 | |
| 75 | |
| 35 | |
| 22.5(Typ) | |
| 85000(Typ) | |
| 1.3(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.4 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | TSFP |
| Lieferantenverpackung | TSFP |
| 4 | |
| Leitungsform | Flat |
Operating at higher RF frequencies has never been easier with this specially designed BFP840FESDH6327XTSA1 RF amplifier from Infineon Technologies. This RF transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |