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Infineon Technologies AGBFR181WH6327XTSA1HF-BJT
Trans RF BJT NPN 12V 0.02A 175mW Automotive AEC-Q101 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Si | |
| Single | |
| 1 | |
| 20 | |
| 12 | |
| <20 | |
| 2 | |
| 0.02 | |
| 0.001 to 0.06 | |
| 1000 | |
| 100 | |
| 8V/5mA | |
| 70@5mA@8V | |
| 50 to 120 | |
| 0.35 | |
| 0.29 | |
| 175 | |
| 19 | |
| 8000(Typ) | |
| 1.2(Min) | |
| -65 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-323 |
| 3 | |
| Leitungsform | Gull-wing |
Look no further than the BFR181WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |