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Infineon Technologies AGBFR181WH6327XTSA1HF-BJT
Trans RF BJT NPN 12V 0.02A 175mW Automotive AEC-Q101 3-Pin SOT-323 T/R
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | Yes |
PPAP | Unknown |
Befestigung | Surface Mount |
Verpackungshöhe | 0.9(Max) |
Verpackungsbreite | 1.25 |
Verpackungslänge | 2 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-323 |
3 | |
Leitungsform | Gull-wing |
Look no further than the BFR181WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.