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Infineon Technologies AGBFR740L3RHE6327XTSA1HF-BJT
Trans RF BJT NPN 4V 0.04A 160mW Automotive AEC-Q101 3-Pin TSLP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single | |
| 1 | |
| 13 | |
| 4 | |
| <20 | |
| 1.2 | |
| 0.04 | |
| 0.001 to 0.06 | |
| 40 | |
| 40 | |
| 3V/15mA | |
| 160@25mA@3V | |
| 120 to 200 | |
| 0.4 | |
| 0.09 | |
| 160 | |
| 9.5(Typ) | |
| 35 | |
| 25(Typ) | |
| 42000(Typ) | |
| 1.5(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 0.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TSLP |
| Lieferantenverpackung | TSLP |
| 3 | |
| Leitungsform | No Lead |
Look no further than the BFR740L3RHE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |