Infineon Technologies AGBFR840L3RHESDE6327XTSA1HF-BJT
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive AEC-Q101 3-Pin TSLP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single | |
| 1 | |
| 2.9 | |
| 2.25 | |
| <20 | |
| 0.035 | |
| 0.001 to 0.06 | |
| 10000 | |
| 400 | |
| 1.8V/10mA | |
| 150@10mA@1.8V | |
| 120 to 200 | |
| 0.34 | |
| 0.052 | |
| 75 | |
| 4(Typ) | |
| 31 | |
| 21(Typ) | |
| 1.1(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | TSLP |
| 3 |
Look no further than the BFR840L3RHESDE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |