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Infineon Technologies AGBFR93AE6327HTSA1HF-BJT
Trans RF BJT NPN 12V 0.09A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | Yes |
PPAP | Unknown |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) mm |
Verpackungsbreite | 1.3 mm |
Verpackungslänge | 2.9 mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Compared to other transistors, the BFR93AE6327HTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.